In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of GaAs(100)

摘要

Within this study, a novel in-situ pretreatment is proposed theoretically ahd demonstrated experimentally, in which the formation of surface pits is subsequently stifled during thermal desorption. The proposed method involves fueling the well reviewed chemical oxide reduction reaction with a segregated source of material other than that ordinarily utilized invpit formation. The proposed method is implementable in virtually all deposition systems subject to the constraints of providing material deposition, substrate heating, and the creation of non-oxidizing environments either via vacuum or inert atmosphere.