Properties of Cu(In,Ga)Se2:Fe Thin Films For Solar Cells

摘要

We have fabricated CIGS:Fe polycrystalline thin films using a standard three-stage method, and investigated the effects of Fe doping on cell performances. The Ga/(In+Ga) ratio was varied between 0.3 ～ 1.0 (= CGS), and the Fe concentration was varied between 0.0 ～ 1.2 mol%. The films were characterized by various means, including the cell performance. Increment of the grain size with higher Fe content was observed. Redshift with higher Fe content was observed in the absorbance spectra. The spectral response of the fabricated solar cells deteriorated with higher Fe content, from the long wavelength side.