Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon

摘要

By μ-Raman spectroscopy the formation of hydrogen related defects (vacancy-hydrogen complexes, hydrogen saturated silicon dangling bonds, H_2 molecules in multi-vacancies and voids/platelets) has been investigated in H-implanted and subsequently H-plasma exposed and annealed Czochralski (Cz) silicon wafers. Annealing was done either in air or in an ambient containing hydrogen (forming gas). The investigations were applied under conditions, which are relevant for ion-cut processes and layer exfoliation in Cz Si for SOI-wafer fabrication at reduced implantation doses (as compared to standard procedures like the smart-cut~® process).