首页> 外文会议>Symposium Proceedings vol.862; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2005; 20050328-0401; San Francisco,CA(US) >Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes
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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

机译:SC-Simul在异质结二极管光电特性数值模拟中的应用

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摘要

We apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.
机译:我们使用公共可用的设备建模工具SC-Simul来模拟用户定义的异质结二极管的实验,以讨论电场在太阳能电池中的作用。对于非晶硅/晶体硅异质二极管,通过模拟电流-电压特性和光致发光来研究界面缺陷,非晶硅缓冲层和低成本晶体硅的作用。光致发光对器件体积中的少数载流子密度敏感,可用于监视这些二极管中的少数载流子特性。

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