Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

机译：替代纳米闪存的优化和仿真：SASEM设备

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Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

机译：进行工艺模拟是为了模拟替代纳米闪存的完整制造过程，以便对其进行优化并提高对点存储结构的理解。研究了各种参数（氧化温度，纳米线形状）的影响。

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《Symposium Proceedings vol.830; Symposium on Materials and Processes for Nonvolatile Memories; 20041130-1202; Boston,MA(US)》|2004年|P.45-50|共6页
会议地点 BostonMA(US)
作者
C. Krzeminski; E. Dubois; X. Tang; N. Reckinger; A. Crahay; V. Bayot;
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Institut Superieur d'Electronique de Microelectronique et de Nanotechnologies, UMR CNRS 8520, Avenue Poincare, Cite Scientifique, BP 69, 59652 Villeneuve d'Ascq, France;

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Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

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