Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

机译：替代纳米闪存的优化和仿真：SASEM器件

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Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

机译：进行处理模拟以模拟替代纳米闪存的完整制造过程，以便优化它并改善对点存储形成的理解。已经研究了各种参数（氧化温度，纳米线形状）的影响。

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《Symposium on Materials and Processes for Nonvolatile Memories》|2005年||共6页
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C. Krzeminski; E. Dubois; X. Tang; N. Reckinger; A. Crahay; V. Bayot;
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Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

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