METASTABLE DEFECTS IN a-Si:H and a-Ge:H: THE ROLE OF HYDROGEN

摘要

Recent advances in understanding the role of hydrogen in the production and annealing of defects that contribute to the Staebler-Wronski effect in hydrogenated amorphous silicon (a-Si:H) are discussed. We discuss the observation by nuclear magnetic resonance of a paired hydrogen site that stabilizes the silicon dangling bond defects that produce the Staebler-Wronski effect, the observation of the Staebler-Wronski effect in a-Ge:H, and the production of neutral silicon dangling bonds in tritiated a-Si:H.