The possibility of single crystal SiC epitaxial growth on freestanding amorphous carbon films (500-1000 A) as well as thin amorphous carbon larers deposited on mono-crystalline SiC seeds, by conventional physical vapor transport (PVT) technique, is demonstrated. Preliminary experiments indicate that under certain specific growth conditions, 3D SiC single crystals (100-600 A) of different poltypes can be grown on freestanding amoprhous carbon layers, withmore or lese equal probability o f formation for each polytype. On the other hand, under low axial temperature gradients (<30 deg C /cm), the SiC epitaxial growth on carbon is amorphous in nature. Also, experimental results that demonstrate two-dimensional single crystal SiC epitaxial growth on an amorphous carbon film deposited on mono-crystalline 6H-SiC wafer, is presented. Experiments performed in our laboratory indicate that mono-crystalline SiC growth is possible on amorphous carbon layers upto 0.1 mu m thickness.
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