PN-Diode P-Oxide-Semiconductor/N-SiC/N-Si Resistive Nonvolatile Memory for Cross-Point Memory Array

摘要

We have demonstrated resistive nonvolatile memory devices with the pn-diode structures of p-AgO_x/SiO_x-SiC-Si(111) and p-CuO_x/SiO_x-SiC-Si(111) which have a good rectifying current-voltage (I-V) characteristic. The forward currents change between high and low, indicating a resistive nonvolatile memory. The I-V and capacitance-voltage (C-V) curve and the structural analyses suggest that existence and nonexistence of trapped electrons in the SiO_x layers corresponds to the low and high forward current states, respectively. These memory devices have a well rectifying characteristic feature; they are expected to be suitable to the most theoretically dense cross-point array.