The Luminescent Properties of Ion-Implantation-Fabricated SiO_2:nc-Si Nanostructures Annealed at High Temperatures

摘要

The influence of the Si~+ implantation dose and postimplantation annealing temperature on the photoluminescence (PL) intensity of silicon nanoinclusions in an SiO_2 matrix was experimentally investigated. The way that the PL varied with dose and annealing temperature was explained on the basis of a model which takes into account the Osiwald ripening of nanocrystals and effect of the quantum dot size on the rate of radiative recombination.