首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Opptical and electrical properties of CdTe nanocrystal quantum dots passivated in amorphous TiO_2 thin film matrix
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Opptical and electrical properties of CdTe nanocrystal quantum dots passivated in amorphous TiO_2 thin film matrix

机译:非晶态TiO2薄膜基质中钝化的CdTe纳米晶体量子点的光电性能

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CdTe nanocrystal quantum dots sequestered in TiO_2 thin film matrix have been synthesized by r.f. sputtering from a composite CdTe/TiO_2 target. CdTe nanocrystal formation is nucleation controlled as their size (11-25 nm), dispersion and volume fraction (0.065-0.2) increases with film thickness, substrate temperature (100 deg C) and thermal treatment. The optical band gap derived from the onset of absorption coefficient showed blue shifts concurrent with the CdTe nanocrystal size reduction due to quantum size effects. These shifts, not consistent with theoretical models based on strong or weak confinement regimes, are explained on the basis of anisotropic growth and formation of CdTe nanocrystal clusters. TiO_2, in addition to being an ideal passivator and providing a barrier for carrier confinement to observe quantum effects, shows O_2 vacancy dependent conductivity modulation. Electrical conductivity variation with CdTe nanocrystal size and density is attributed to electrical coupling and tunneling behavior of carriers between CdTe nanocrystallites.
机译:r.f法合成了隔离在TiO_2薄膜基质中的CdTe纳米晶体量子点。从复合CdTe / TiO_2靶溅射。 CdTe纳米晶体的形成受到成核的控制,因为它们的大小(11-25 nm),分散度和体积分数(0.065-0.2)随着膜厚度,基板温度(100℃)和热处理而增加。由吸收系数的开始产生的光学带隙显示出蓝移,同时由于量子尺寸效应,CdTe纳米晶体尺寸减小。这些变化与基于强或弱约束机制的理论模型不一致,是在各向异性生长和CdTe纳米晶簇形成的基础上进行解释的。 TiO_2除了是理想的钝化剂并为限制载流子以观察量子效应提供了屏障外,还显示了O_2空位依赖性的电导率调制。 CdTe纳米晶体尺寸和密度随电导率的变化归因于CdTe纳米晶体之间载流子的电耦合和隧穿行为。

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