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Opptical and electrical properties of CdTe nanocrystal quantum dots passivated in amorphous TiO_2 thin film matrix

机译:在无定形TiO2薄膜基质中钝化CdTe纳米晶体点的光学和电性能

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CdTe nanocrystal quantum dots sequestered in TiO_2 thin film matrix have been synthesized by r.f. sputtering from a composite CdTe/TiO_2 target. CdTe nanocrystal formation is nucleation controlled as their size (11-25 nm), dispersion and volume fraction (0.065-0.2) increases with film thickness, substrate temperature (100 deg C) and thermal treatment. The optical band gap derived from the onset of absorption coefficient showed blue shifts concurrent with the CdTe nanocrystal size reduction due to quantum size effects. These shifts, not consistent with theoretical models based on strong or weak confinement regimes, are explained on the basis of anisotropic growth and formation of CdTe nanocrystal clusters. TiO_2, in addition to being an ideal passivator and providing a barrier for carrier confinement to observe quantum effects, shows O_2 vacancy dependent conductivity modulation. Electrical conductivity variation with CdTe nanocrystal size and density is attributed to electrical coupling and tunneling behavior of carriers between CdTe nanocrystallites.
机译:通过R.F合成了在TiO_2薄膜基质中隔绝的CdTe纳米晶体点已经合成。从复合CDTE / TiO_2靶溅射。 CdTe纳米晶体形成为其尺寸(11-25nm),分散体和体积分数(0.065-0.2)随膜厚度,衬底温度(100℃)和热处理而增加。源自吸收系数发作的光学带隙显示出与量子尺寸效应引起的CdTe纳米晶体尺寸的同时的蓝色移位。这些换档不与基于强或弱监禁制度的理论模型一致,基于各向异性生长和形成CdTe纳米晶体簇。除了作为理想的钝化剂并为载体限制提供障碍以观察量子效应,还显示O_2空位依赖性电导调制。 CdTe纳米晶体尺寸和密度的导电率变化归因于CDTE纳米晶体之间载体的电耦合和隧道行为。

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