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Microstructural deveopment of thin CoCrTa films on Cr underlayers

机译:Cr底层上的ConCerTa薄膜的微结构开发

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The structure of 2.8 - 60nm thick films of CoCrTa sputtered onto a 50nm Cr underlayer at 250 deg C was studied using atomic resolution microscopy. The Cr grows with a (200) orientation and the CoCrTa grows epitaxially with the [0002] axis in the film plane. the thinnest films have a discontinuous microstructure with several CoCrTa nuclei forming on each grain, with slight misalignment from the exact Pitsch-Schrader orientation relation. The CoCrTa grains coalesce as the film thickness exceeds 10nm and there is evidence for stacking faults at all film thicknesses.For most films the magnetic switching volumes are of similar size to the physical grain volume, suggesting that the entire grain volume participates in magnetic switching.
机译:使用原子分辨率显微镜研究了在250℃下溅射到50nm Cr底层上的2.8-60 nm厚的CoCrTa膜的结构。 Cr以(200)取向生长,而CoCrTa在膜平面中以[0002]轴外延生长。最薄的薄膜具有不连续的微观结构,在每个晶粒上形成几个CoCrTa核,与精确的Pitsch-Schrader取向关系略有偏离。当薄膜厚度超过10nm时,CoCrTa晶粒会聚结,并且有证据表明在所有厚度的薄膜上都有堆垛层错。对于大多数薄膜而言,磁转换体积的大小与物理晶粒体积相似,表明整个晶粒体积都参与了磁转换。

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