Intense UV-visible-IR adjustable photoluminescence from silicon-rich oxynitride layers prepared by plasma-enhanced chemical vapor deposition

摘要

The intense UV-visible-IR adjustable light emissions from silicon-rich oxynitride thin films without any thermal annealing were observed at room temperature under a 325 nm He-Cd laser excitation. The silicon-rich oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) with the mixture of 5