Monolayer and multilayer silicin prepared by plasma-enhanced chemical vapor deposition

摘要

The present invention relates to processes for preparing multilayer and monolayer lysine on catalytic metal surfaces by plasma-enhanced chemical vapor deposition (PECVD). Silicate god 100 to 400 of the H ₂ on a Ag (111) substrate having a substrate temperature of between 20 and 290 ℃ ℃: H ₂ and SiH ₄ having a ratio It is grown by PECVD from the starting mixture of SiH ₄ and deposition is carried out for about 10-25 minutes at RF powers of 10W and 500W and under chamber pressure between about 100 mTorr and 1300 mTorr. In most cases, the substrate will be in the form of an Ag (111) film sputtered onto the fused silica substrate. Multilayer silicin films can be formed by extending the deposition time by 25 minutes.