Fabrication of Thermoelectric Devices Using AlInN and InON Films prepared by reactive radio-frequency sputtering

摘要

We have studied the thermoelectric properties of AlInN and InON films prepared by reactive radio-frequency (RF) sputtering. We have fabricated thermoelectric devices which are composed of 20-pair nitride or oxynitride films with Chromel metal. For a AlInN device, the maximum output power was 7.6x10~(-7) W at ΔT= 257K, and for a InON device, that was 6.5x10~(-8) W at ΔT = 214K.