Thermoelectric and thermal properties of AlInN thin films prepared by reactive radio-frequency sputtering

摘要

We have studied the thermoelectric and thermal properties of AlInN targeting a thermoelectric device using nitrides. In a Al_(0.57)In_(0.43)N thin film, we obtained a minimum value of of 2.2 x 10~(-6) m~2/s for thermal diffusivity and a maximum value of 1.8 x 10~(-4) W/mK~2 for power factor.