Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr_(0.53)Ti_(0.47))O_3 on Al_xGa_(1-x)N/GaN Heterostructures

摘要

An Al_xGa_(1-x)N/GaN-based metal-ferroelectric-semiconductor (MFS) structure is developed by depositing a Pb(Zr_(0.53)Ti_(0.47))O_3 film on a modulation-doped Al_(0.22)Ga_(0.78)N/GaN heterostructure. In high-frequency capacitance-voltage (C-V) measurements, the sheet concentration of the two-dimensional electron gas at the A1_(0.22)Ga_(0.78)N/GaN interface in the MFS structure decreases from 1.56 x 10~(13) cm~(-2) to 5.6 x 10~(12) cm~(-2) under the ―10 V applied bias. A ferroelectric C-V window of 0.2 V in width near ―10V bias is observed, indicating that the Al_xGa_(1-x)N/GaN MFS structure can achieve memory performance without the reversal of the ferroelectric polarization. The results indicate that Al_xGa_(1-x)N/GaN heterostructures are promising semiconductor channel candidates for MFS field effect transistors.