Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1100 deg C

摘要

The activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400 deg C. Although previous work has shown that Si-implanted Gan can be activated by a rapid thermal annealing at approx 1100 deg C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal orgnaic chemical vappor deposition system in a N_2/NH_3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1300 deg C before degrading at 1400 deg C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity.