首页> 外文会议>Symposium on Gallium Nitride and Related Materials II April 1-4,1997,San Francisco,California,U.S.A. >Pryolytic preparation of gallium nitride from Ga(NEt_2)_3_2 and its ammonolysis ocmpound
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Pryolytic preparation of gallium nitride from Ga(NEt_2)_3_2 and its ammonolysis ocmpound

机译:Ga(NEt_2)_3 _2的氨解及其氨解化合物的裂解制备

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Gallium nitride (GaN) was prepared by the pyrolytic conversion of both [Ga(NEt_2)_3]_2 and its ammonolysis product at 600 deg C for 4 h under Ar. The pyrolyzed residues were analyzed by X-ray powder diffraction and scanning electron microscopy, and the pyrolysis processes of the precursors under He were investigated by thermogravimetry-mass spectrometry.The XRD pattern of the pyrolyzed residue of [Ga(NEt_2)_3]_2 showed well- resolved peaks due to a mixture of cubic and hexagonal close-packed layers of GaN. The broad XRD pattern of the pyrolyzed residue of the ammonolysis product was also attributed to the mixture of cubic and hexagonal close-packed layers of GaN.For the pyrolysis of [Ga(NEt_2)_3]_2, the evolution of hydrocarbons was extensively observed at relatively high temperature,but a large amount of carbon (11 mass
机译:氮化镓(GaN)是通过[Ga(NEt_2)_3] _2及其氨解产物在Ar下于600℃热解4 h制备的。通过X射线粉末衍射和扫描电子显微镜分析热解残留物,并通过热重质谱分析He在前驱体上的热解过程。[Ga(NEt_2)_3] _2热解残留物的XRD图谱由于GaN立方和六方密堆积层的混合,导致峰的分离度很好。氨解产物的热解残渣的宽广的XRD图谱也归因于GaN立方和六方密堆积层的混合物。[Ga(NEt_2)_3] _2的热解过程中,广泛观察到碳氢化合物的析出相对较高的温度,但是有大量的碳(11质量

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