A projection-type excimer-laser crystallization system for ultra-large grain growth of Si thin-films

摘要

We have proposed a new ecimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using one-and two-dimensional phase-shift masks, we have examined feasibility of the proposed method.