Morphological transition of Ge islands on Si(001) grwon by LPCVD

摘要

Hut- and dome-shaped silands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700 deg C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes plce after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.