首页> 外文会议>Symposium on Epitaxial Growth--Principles and Applications held April 5-8, 1999, San Francisco, California, U.S.A. >Connection between Structure and Electronic Properties in Epitaxial Magnetic Layers
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Connection between Structure and Electronic Properties in Epitaxial Magnetic Layers

机译:外延磁性层的结构与电子性质之间的联系

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This study explores the consequences of structure on the electronic properties of magnetic multilayers. Epitaxial layers of Co and Cu are grown on Cu(100) in a new deposition system that couples sputter-deposition with MBE and contains a wide range of characterization tools, including RHEED, LEED, and Kerr effect. This system can be coupled in situ to spin-polarized, angle-resolved photoemission and to resonant, magnetic X-ray scattering, both employing synchrotron radiation. The interface structure turns not to be critical in determining the coercivity and the presence of quantum well states, which determine oscillatory magnetic coupling.
机译:这项研究探讨了结构对磁性多层电子性能的影响。在新的沉积系统中,Co和Cu的外延层生长在Cu(100)上,该沉积系统将溅射沉积与MBE耦合在一起,并且包含多种表征工具,包括RHEED,LEED和Kerr效应。该系统可以原位耦合到自旋极化,角度分辨的光发射以及共振的磁X射线散射,两者都采用同步加速器辐射。在确定矫顽力和确定量子阱态的存在时,界面结构就变得不再重要,量子态决定了振荡磁耦合。

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