Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 100>

摘要

Epitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <11 20> and <1 100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.