Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t-butoxy) silanol and Anhydrous Metal Nitrates

摘要

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO_2/SiO_2 films (M = Hf, Zr and Sn) using tri(r-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 ℃. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.