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Observation of normal and superconducting state energy gap features from intrinsic c-axis interlayer tunneling in Bi2Sr2CaCu2O8 crystals

机译:从Bi2Sr2CaCu2O8晶体的固有c轴层间隧穿观察正常和超导态能隙特征

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Abstract: The non-linear, c-axis, inter-layer electrical properties of Bi$-2$/Sr$-2$/CaCu$-2$/O$-8$/ single crystals in the normal and superconducting states have been investigated. Measurements of the IV characteristics and dynamic conductivity across lithographically defined stacks of intrinsic junctions on the surface of single crystals of various doping are reported. We demonstrate that the increase in c-axis resistance at low temperatures is related to the emergence of a normal state pseudo-gap. At T$-c$/ a zero bias Josephson tunneling conductance peak emerges, along with additional voltage dependent features, consistent with an energy gap in the tunneling density of states. The additional structure emerges at an already well-defined energy, implying the condensation of pre-formed pairs. Both the normal and superconducting state derived energy gaps are significantly smaller than obtained from ARPES and surface tunneling measurements. The absence of significant thermal broadening suggests coherent c-axis tunneling between adjacent CuO$-2$/ bi-layers, at variance with generally accepted views. Well into the superconducting state, the IV characteristics become strongly re-entrant with a functional from that suggests non-equilibrium tunneling effects play an important role at large biases. !15
机译:摘要:在正常和超导状态下Bi $ -2 $ / Sr $ -2 $ / CaCu $ -2 $ / O $ -8 $ /单晶的非线性c轴层间电特性具有被调查。报道了在各种掺杂的单晶表面上的光刻定义的本征结堆叠上的IV特性和动态电导率的测量。我们证明,低温下c轴电阻的增加与正常状态伪间隙的出现有关。在T $ -c $ /处,出现零偏置的约瑟夫森隧穿电导峰,以及其他依赖电压的特征,与状态的隧穿密度中的能隙一致。额外的结构以已经确定的能量出现,这意味着预成型对的冷凝。从正常状态和超导状态导出的能隙都比从ARPES和表面隧穿测量获得的要小。没有显着的热展宽表明相邻的CuO $ -2 $ /双层之间的连贯c轴隧穿,与普遍接受的观点有所不同。进入超导状态后,IV特性变得强烈折返,并且具有一种功能,表明非平衡隧穿效应在较大的偏置下起着重要的作用。 !15

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