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A WAFER-SCALE PARTICLE AUGMENTED MIXED LUBRICATION MODELING APPROACH FOR CHEMICAL MECHANICAL POLISHING

机译:用于化学机械抛光的晶片级颗粒增强混合润滑建模方法

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The mechanical or tribological action in CMP involves hydrodynamic lubrication, solid contact and abrasive wear,primarily resulting from hard dynamic particles removing material by abrasion. Present work introduces a muchfaster version of the particle augmented mixed lubrication (PAML) modeling approach, previously introduced byTerrell and Higgs, in the form of PAML-lite. With this model, the PAML approach can now be applied to the fullscalewafer-pad interface. Results from this work include the evolution of the hydrodynamic fluid pressure, contactstress, and finally the material removal at the local and wafer scales. Comparisons with existing CMP experimentshave been made and the results are favorable.
机译:CMP中的机械或摩擦作用包括流体动力润滑,固体接触和磨料磨损,这主要是由于硬质动态颗粒通过磨蚀而去除材料所致。当前的工作介绍了一种更快的版本的颗粒增强混合润滑(PAML)建模方法,该方法以前是由Terrell和Higgs以PAML-lite的形式引入的。通过这种模型,现在可以将PAML方法应用于全尺寸晶圆焊盘接口。这项工作的结果包括流体动压的变化,接触应力以及最终在局部和晶圆尺度上去除材料的情况。与现有的CMP实验进行了比较,结果令人满意。

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