COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND METHOD FOR MANUFACTURING PARTICLES FOR CHEMICAL MECHANICAL POLISHING

摘要

Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material.　The composition for chemical mechanical polishing according to the present invention contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium.　(1): -SO₃^-M⁺ (In the formula, M⁺ represents a monovalent cation.)