Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA;
Kopin Corporation, Taunton, Massachusetts 02780, USA;
Kopin Corporation, Taunton, Massachusetts 02780, USA;
Kopin Corporation, Taunton, Massachusetts 02780, USA;
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA;
机译:通过使用pt门控AlGaN / GaN高电子迁移率晶体管来改善关态应力临界电压
机译:栅极应力偏置后E-Mode P-GaN栅极AlGaN / GaN高电子移动晶体管的栅极电容和截止状态特性
机译:GaN应力对关态偏压下Si上AlGaN / GaN高电子迁移率晶体管的阈值电压漂移的影响
机译:利用Pt / Ti / Au基于基于栅极金属化的AlGaN / GaN高电子迁移晶体管的改进的断开状态应力临界电压
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:在关态应力下AlGaN / GaN高电子迁移率晶体管中电致发光,栅极电流泄漏和表面缺陷之间的联系