Investigation and Fabrication of AlGaN/GaN MOS-HEMTs With Gate Insulators Grown by Photoelectrochemical Oxidation Method

摘要

AlGaN/GaN MOS-HEMTs with gate insulators directly grown using photoelectrochemical (PEC) oxidation method were investigated. The gate length and the gate width is 1 μm and 50 μm, respectively. The drain-source saturation current (V_(gs)=0 V) and the threshold voltage of AlGaN/GaN MOS-HEMTs is 580 mA/mm and -9 V, respectively. The maximum extrinsic transconductance is 76.72 mS/mm operated at V_(GS)=- 5.1 V and V_(ds)=10 Y The forward breakdown voltage and reverse breakdown voltage is 25 V and larger than -100 V, respectively. When the V_(GS)=- 60 V and 20 V, the leakage current was 102 nA and 960 nA, respectively. The low frequency noise characteristics were also measured and studied. The Hooge's coefficient estimated at V_(GS)=0 V. When V_(DS) is 10 V and 2 V at frequency of 100 Hz, the Hooge's coefficient is 1.25 ×10~(-3) and 5.69×10~(-4), respectively.