Simulation of Highly Efficient InGaN-Based LEDs with Hemispherical Patterned Sapphire Substrates

摘要

Simulation is used to study how the external quantum efficiency changes with the change in parameters of the unit hemisphere for GaN-based light emitting diodes (LEDs) fabricated on hemispherical patterned sapphire substrates. Through a series of experiments, we reveal the most effective pattern to improve the external quantum efficiency of LEDs on hemispherical patterned sapphire substrates. We also want to demonstrate a convenient way for pattern design and checking.