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Electrodeposition of arrays of ZnO nanostructures and application to photoelectrochemical devices

机译:ZnO纳米结构阵列的电沉积及其在光电化学装置中的应用

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ZnO nano/microstructures offer the opportunity to design new types of photoelectrochemical devices. Arrays of single crystal ZnO nanowires present very interesting properties to enhance the performance in these devices. A systematic study of the deposition of single crystal ZnO nanowire arrays from the oxygen electroreduction method is reported in order to gain a further insight into the nanowire growth mechanisms and to develop an efficient electrochemical method which allows tailoring the nanowire dimensions. The influence of deposition parameters such as zinc precursor and supporting electrolyte concentrations on the formation of a polycrystalline compact ZnO layer or a ZnO nanowire array, as well as on the dimensions of the single crystal nanowires is analyzed. The effect of the polycrystalline compact ZnO buffer layer on the nanowire nucleation process and therefore on the nanowire diameter and density is also discussed. The results show that electrodeposition is a versatile and cost-effective technique which allows growing ZnO single crystal nanowire arrays with tailored dimensions. The structural and optical properties of electrodeposited nanowire arrays are discussed. ZnO nanowires can be sensitized by the coating of a thin layer of CdSe. The ZnO/CdSe photoanode exhibits excellent photoelectrochemical properties and external quantum efficiency larger than 70% are observed in ferri/ferrocyanide solutions.
机译:ZnO纳米/微结构为设计新型光电化学器件提供了机会。单晶ZnO纳米线阵列具有非常有趣的特性,可以增强这些设备的性能。报道了通过氧气电还原法对单晶ZnO纳米线阵列进行沉积的系统研究,目的是获得对纳米线生长机制的进一步了解,并开发出可定制纳米线尺寸的高效电化学方法。分析了沉积参数(例如锌前驱体和支持电解质的浓度)对多晶致密ZnO层或ZnO纳米线阵列的形成以及单晶纳米线尺寸的影响。还讨论了多晶致密ZnO缓冲层对纳米线成核过程的影响,并因此对纳米线直径和密度的影响。结果表明,电沉积是一种通用且具有成本效益的技术,它允许生长具有定制尺寸的ZnO单晶纳米线阵列。讨论了电沉积纳米线阵列的结构和光学性质。 ZnO纳米线可以通过CdSe薄层的涂层来敏化。 ZnO / CdSe光电阳极具有出色的光电化学性能,在亚铁/亚铁氰化物溶液中观察到的外部量子效率大于70%。

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