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Features design and manufacturing technology in micro-electromechanical encapsulated devices

机译:微机电封装器件的特征设计和制造技术

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摘要

Research methodology for measuring the natural frequency of the inner and outer frames of micromechanical oscillating system with an electrostatic actuator in filling spaces inside corps with nitrogen, and verification methodology of a micromechanical sensor element (SE) on the basis of rotation angle measurement has been developed. Developed new technical solution was consisted in that for correcting errors in the form of etched shapes compensator topology with special configuration has been used. It was possible to obtain the moving parts of MEMS with etched rectangular shape figures and with a large etching depth about 400 microns. Hydrogenated silicon surface layers were investigated by IR -spectroscopy. It was shown that substrate temperature plays a primary role in the formation of hydrogen-defect layer in silicon. The behavior of the low-frequency band in the region of stretching vibrations of Si-H during annealing has been analyzed. The dependence character of the resonance frequency of the movable (SE) part of MEMS torsion type vs temperature has been investigated. It was found that when the temperature changes from 25 to 80 ℃, so natural SE frequency does not change more than 1%. The dependence of the quality factor and the natural frequency of the moving SE part from the inside corps pressure on the various modes of oscillation was investigated.
机译:研究了用静电致动器测量氮在车厢内部空间中的微机械振荡系统的内,外框架固有频率的研究方法,以及基于旋转角测量的微机械传感器元件(SE)的验证方法。 。所开发的新技术解决方案包括采用特殊配置来校正蚀刻形状补偿器拓扑形式的误差。可以获得具有蚀刻的矩形图形并且具有约400微米的大蚀刻深度的MEMS运动部件。通过红外光谱研究氢化的硅表面层。结果表明,衬底温度在硅中氢缺陷层的形成中起主要作用。分析了退火过程中Si-H拉伸振动区域中的低频行为。已经研究了MEMS扭转类型的可移动(SE)部分的谐振频率与温度之间的依赖性。已经发现,当温度从25变为80℃时,自然SE频率的变化不会超过1%。研究了质量因数和运动的SE零件从内部躯干压力运动的固有频率对各种振荡模式的依赖性。

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  • 来源
  • 会议地点 Barcelona(ES)
  • 作者单位

    National Research University of Electronic Technology MIET, Intelligent technical systems Faculty, Microelectronics Department, Bld.5, Pass 4806, Zelenograd, 124498, Russia;

    National Research University of Electronic Technology MIET, Intelligent technical systems Faculty, Microelectronics Department, Bld.5, Pass 4806, Zelenograd, 124498, Russia;

    National Research University of Electronic Technology MIET, Intelligent technical systems Faculty, Microelectronics Department, Bld.5, Pass 4806, Zelenograd, 124498, Russia;

    National Research University of Electronic Technology MIET, Intelligent technical systems Faculty, Microelectronics Department, Bld.5, Pass 4806, Zelenograd, 124498, Russia;

    National Research University of Electronic Technology MIET, Intelligent technical systems Faculty, Microelectronics Department, Bld.5, Pass 4806, Zelenograd, 124498, Russia;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    acceleration; transducer; design; capacitance; sensing element; displacement; signal;

    机译:加速传感器;设计;电容;感应元件移位;信号;

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