EFFECT OF MATERIAL PROPERTIES ON STRESS-INDUCED DEFECT GENERATION IN TRENCHED SOI

摘要

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator (SOI) structures. A strong dependence on the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic catagories: heavily boron-doped silicon showed ready slip generation; arsenic and antimony-doped material was fairly resistant to slip; while silicon moderately or lightly doped with phosphorous or boron gave intermediate behaviour. The observed behaviour appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. A relationship between dopant species and slip was also seen in SOI prepared with various implanted buried layers at the bonding interface. Here, the greatest slip occurred for both boron and antimony-implanted samples.