Fabrication of FEA Using Focused Ion and Electron Beams

摘要

Niobium gated silicon field emitter arrays (FEAs) were fabricated using focused ion (FIB) and electron beams. Gate opening was produced either by physical sputtering of both the niobium and the silicon dioxide layer using FIB or by physical sputtering of niobium and subsequent wet etching of silicon dioxide layer. Prototype devices, exhibiting field emission, were produced successfully.