40 Gbit/s silicon modulators fabricated on 200 mm and 300 mm SOI wafers

摘要

We present 40 Gbit/s optical modulators based on different types of phase shifters (lateral pn, pipin, and interleaved pn junction phase). Those structures were processed both on 200 and 300mm SOI wafers, available in large-scale microelectronic foundries. Both Ring Resonators (RR) and Mach Zehnder (MZ) modulators were fabricated. As an example, MZ modulator based on 0.95 mm long interleaved pn junction phase shifter delivered a high ER of 7.8 dB at 40 Gbit/s with low optical loss of only 4 dB. Ring modulator was also fabricated and characterized at high-speed, exhibiting 40 Gbit/s.