Theoretical analysis of quasi-ballistic hole transport in Ge and Si nanowires focusing on energy relaxation process

摘要

The quasi-ballistic hole transport capabilities of Ge and Si NWs were calculated using atomistic electron-phonon coupling and Boltzmann transport equation. Analyzing the forward and backward current fluxes, it was shown that the positive impact of high mobility of Ge is canceled by its slower energy relaxation, which results in comparable transmission coefficients and current transport capabilities between Ge and Si NWs.