Selective Epitaxial Growth of Si(Ge) forHigh Performance MOSFET Applications

摘要

Selective epitaxial growth of Si and SiGe films has been applied tornthe fabrication of many high-performance MOSFETs, because newrndevice structures can be realized by selective epitaxial growth.rnSelective growth of Si(Ge) at the source/drain region is the mostrnwell-known example. Precise control of the selective epitaxialrnprocess enables the best performance with the desired structure.rnControl of the selectivity is also important for a robustrnmanufacturing process. Selective epitaxial growth is essential forrnnext-generation MOSFETs, such as FinFETs. Innovation ofrnselective epitaxial growth will spur the continuous progress ofrnMOSFETs.