Emission characteristics of zirconium- and niobium-nitride field emitters fabricated by ion beam assisted deposition

摘要

Zirconium- and niobium-nitride field emitters were fabricated by ion beam assisted deposition. A silicon field emitter array was covered with the nitride, and the electron emission from the emitter was examined. Correlation between the film properties and the emission properties was investigated and it was found that the emitters with a lower work function shows a lower current fluctuation. Among the emitters fabricated in this study, stoihiometric niobium nitride emitter exhibited the best emission property.