A Study on STI-CMP for the 0.10 μm Technology Node

摘要

Conventional STI-CMP with reverse-tone technology was successfully extended into 0.10μm technology node on a logic test vehicle. In this study, process integration (from re-filled oxide to CMP) was investigated in detail to meet the requirements, such as dishing, uniformity, and nitride loss. Step-by-step evaluation of STI-CMP process was used to verify the planarity efficiency. Process stability was demonstrated to show the feasibility of mass production. An empirical model for determining the thickness of re-filled oxide on conventional STI-CMP with reverse tone process was derived. Thus, the extension of conventional CMP process along with reverse-tone into the 0.10μm technology node was successfully demonstrated.