Effect of Pre-bonding Thermal Treatment on the Bonding Interface Evolution in Direct Si-Si Hydrophilic Wafer Bonding

摘要

The effect of annealing prior to Silicon-Silicon direct bonding is investigated. It is shown that this thermal treatment densities and increases the thickness of the native oxide, which becomes essentially water-tight. Hence, the evolution of the bonding interface upon post-bonding annealing is significantly altered.