首页> 外文会议>Semiconductor Lasers III >Enhancement of spontaneous emission factor in selectively oxidized vertical-cavity lasers with double oxide layers
【24h】

Enhancement of spontaneous emission factor in selectively oxidized vertical-cavity lasers with double oxide layers

机译:具有双氧化物层的选择性氧化垂直腔激光器中的自发发射因子的增强

获取原文
获取原文并翻译 | 示例

摘要

Abstract: The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.!22
机译:摘要:对选择性氧化的垂直腔面发射激光器(VCSEL)进行了数值研究,研究了孔径和氧化区域中横向传播模式的行为。结果表明,由于氧化层的折射率低,其在氧化区域内的横向传播方式受到很大的影响,对于具有足够厚的双氧化物层的VCSEL,该方式是发散的。因此,孔隙中的模式与氧化区域之间的耦合非常弱,我们可以预期,在这种情况下,横向自发发射会受到很大影响。忽略横向自发发射的贡献,我们通过计算具有双氧化物层的选择性氧化VCSEL中的导模总数来计算自发发射因子。结果与所报告的测量结果非常吻合,并且与横向索引步长成反比!22

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号