Charge trapping flash device with Si3N4/HfxAl1−xO stack charge trapping layer

摘要

Although enhancement on electrical properties of flash devices with HfAlO charge trapping layer has been reported, there are still serious problems in retention characteristics. In this work, a charge-trapping (CT) flash device with Si3N4/HfxAl1−xO as charge trapping layer is presented. Experimental results show that the program/erase speeds of the proposed devices can be enhanced and the retention characteristic is improved as well.