Although enhancement on electrical properties of flash devices with HfAlO charge trapping layer has been reported, there are still serious problems in retention characteristics. In this work, a charge-trapping (CT) flash device with Si3N4/HfxAl1−xO as charge trapping layer is presented. Experimental results show that the program/erase speeds of the proposed devices can be enhanced and the retention characteristic is improved as well.
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机译：虽然报告了具有Hfalo电荷捕获层的闪光装置的电气性能的增强，但保持特性仍存在严重问题。在这项工作中，带Si 3 N 4 / HF X AL 1-X < / INF> O作为电荷捕获层。实验结果表明，可以提高所提出的装置的程序/擦除速度，并且还提高了保持特性。
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