High work function metal gate and reliabitity improvement for MOS device by integration of TiN/MoN and HfAlO dielectirc

摘要

Electrical characteristics and thermal stability of MOS devices with TiN/MoN metal stacks and various gate dielectrics were studied in this work. High work function gate is achieved by integrating TiN/MoN stack with HfAlO dielectric. Reliability characteristics, in terms of stress-induced leakage current and stress-induced Vfb shift, are improved for metal gate stack on high-k dielectric in comparison with that on SiO2.