A highly integrated high-voltage bi-directional switch

摘要

In recent years, a bondwire-less integration approach has been demonstrated for vertical power devices [1]. It is based on the use of bumps (e.g. small blocks of copper) to connect the top of vertical power components. This enables a significant improvement in power density and performance compared with standard modules, the major benefits being a dramatic reduction of the stray inductance and the possibility for double-sided cooling. The approach of [1] was extended to stacked device integration in [2], which proposed a prototypal half-bridge switch design. In this paper, an approach is presented which advances the previous work by implementing a front-to-front device stacking concept, thus resulting in an improved utilization of space, optimized device performance and a more simplified assembly process. As a case study, the design and implementation of a high-voltage bi-directional switch is considered, and upon which preliminary functional tests are carried out.