A review of high-voltage integrated power device for AC/DC switching application

摘要

High-voltage (HV) integrated power devices are widely used in many applications, including alternating current/direct current (AC/DC) power converter, HV gate driver integrated circuit (IC) and light emitting diode (LED) driver IC, etc. Among these applications, AC/DC power converter is essential for almost all power systems operated in the DC conditions. As a power switch in the AC/DC converter, the fundamental performance requirement of these power devices is to withstand a high voltage of 500-900 V and simultaneously have a low power loss for its efficient conversion. Therefore, several device technologies have been proposed to realize a high breakdown voltage (BV) and a low specific on-resistance (R-on,R- sp), such as reduced surface field (RESURF) technology, lateral super junction (SJ) structure, lateral insulated-gate bipolar transistor (LIGBT), integrated vertical structure and junction termination technology. In this paper, a comprehensive review of the development and prospect of these technologies in AC/DC switching application is presented. Furthermore, analytic R-on,R- sp-BV models for some typical device structures, the possible strategies of Bipolar - Complementary metal oxide semiconductor - Double-diffused metal oxide semiconductor (BCD) platform integrated with vertical SJ devices, partial silicon-on-insulator (SOI) BCD technology, low gate charge (Q(g)) HV integrated power devices and wide bandgap technology are also described.