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Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

机译:基于其内部电热行为的光学特性对SiC器件进行物理建模

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While the material and process technologies for SiC devices are becoming steadily more mature, the predictive simulation of SiC devices still lacks the availability of accurately calibrated physical device models. Basically it is feasible to adopt the physical models describing silicon devices for the analysis of SiC devices, but it is indispensable to recalibrate the model parameters. A reliable calibration requires measured and simulated data that can be one-to-one related to each other. But while experimental data mostly refer to the terminal behavior of the device under test, simulations can also provide insight into the "innerelectronic" behavior. It is, therefore, desirable to have immediate experimental access also to quantities which are characteristic of the space-and time-resolved internal operation of SiC devices, because these constitute a very detailed and reliable reference for an accurate model calibration. In view of the device physics underlying the electrothermal behavior of devices, the space- and time-resolved electron and hole concentrations as well as the temperature distribution are among the most interesting quantities.
机译:尽管SiC器件的材料和工艺技术逐渐趋于成熟,但是SiC器件的预测性仿真仍然缺乏精确校准的物理器件模型的可用性。基本上,采用描述硅器件的物理模型来分析SiC器件是可行的,但是重新校准模型参数是必不可少的。可靠的校准要求测量和模拟的数据可以一对一相关。但是,尽管实验数据主要涉及被测设备的终端行为,但模拟也可以提供对“内部电子”行为的深入了解。因此,期望对SiC装置的空间和时间分辨内部操作具有特征性的数量也要立即进行实验,因为它们构成了用于精确模型校准的非常详细和可靠的参考。考虑到器件电热行为所基于的器件物理特性,空间和时间分辨的电子和空穴浓度以及温度分布是最令人感兴趣的量。

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