Physical modeling of SiC devices based on the optical characterization of their internal electrothermal behavior

摘要

While the material and process technologies for SiC devices are becoming steadily more mature, the predictive simulation of SiC devices still lacks the availability of accurately calibrated physical device models. Basically it is feasible to adopt the physical models describing silicon devices for the analysis of SiC devices, but it is indispensable to recalibrate the model parameters. A reliable calibration requires measured and simulated data that can be one-to-one related to each other. But while experimental data mostly refer to the terminal behavior of the device under test, simulations can also provide insight into the "innerelectronic" behavior. It is, therefore, desirable to have immediate experimental access also to quantities which are characteristic of the space-and time-resolved internal operation of SiC devices, because these constitute a very detailed and reliable reference for an accurate model calibration. In view of the device physics underlying the electrothermal behavior of devices, the space- and time-resolved electron and hole concentrations as well as the temperature distribution are among the most interesting quantities.