Current status and prospects of FET-type ferroelectric memories

摘要

In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET)narrays for applying to a single-transistor-cell-type digital memory andnto a synaptic connection circuit in an artificial neural network arenfirst introduced. Then, current status of the experimental studies onnMF(MI)S (I: insulator) capacitors and FETs is presented and finallynprospects of FET-type ferroelectric memory are discussed